Regenerative switching phenomenon of a GaAs metal-n-δ(p+)-n-n+ structure

被引：0
|
作者：
Guo, Der-Feng [1 ]
Yeou, Wen-Chen [1 ]
Lour, Wen-Shiung [1 ]
Hsu, Wei-Chou [1 ]
Liu, Wen-Chau [1 ]
机构：
[1] Private Kung-San Inst of Technology, and Commerce, Tainan Hsien, Taiwan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1993年 / 32卷 / 7 B期
关键词：
Semiconducting gallium arsenide;
D O I：
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学科分类号：
摘要：
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