New n+-GaAs/δ(P+)-GaInP/n-GaAs camel-gate HFET with high breakdown voltage and low leakage current

被引：0
|
作者：
Chang, WL [1 ]
Lour, WS [1 ]
Young, ST [1 ]
Wu, MY [1 ]
Liu, WC [1 ]
机构：
[1] Natl Taiwan Ocean Univ, Dept Elect Engn, Keelung, Taiwan
来源：
PROCEEDINGS OF THE SYMPOSIUM ON LIGHT EMITTING DEVICES FOR OPTOELECTRONIC APPLICATIONS AND THE TWENTY-EIGHTH STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS | 1998年 / 98卷 / 02期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
We report on n(+)-GaAs/delta(P+)-GaInP/n-GaAs camel-gate heterojunction field-effect transistors (HFET's) by LP-MOCVD. The active channel was tri-step doped to obtain high-barrier camel-diode. delta(P+)-GaInP layer was employed to offer a high valence band offset as a hole barrier as well as an enhanced conduction band offset for a good electron confinement. A fabricated camel diode exhibits a barrier height larger than 1.2 eV and a very high breakdown voltage of 33 V. The measured transconductance is 140 mS/mm with a unity current gain frequency of 17 GHz for a 1x50 mu m(2) device.
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页码：455 / 460
页数：6
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