VOLTAGE DISTRIBUTION IN N+-N-N+ AND METAL-CATHODE N-N+ GAAS X-BAND OSCILLATORS USING A SEM

被引：1
|
作者：
TEE, WJ [1 ]
FARQUHAR, SG [1 ]
GOPINATH, A [1 ]
机构：
[1] UNIV WALES,UNIV COLL N WALES,SCH ELECTR,BANGOR LL57 2UW,GWYNEDD,WALES
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 06期
关键词：
D O I：
10.1109/T-ED.1978.19150
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：655 / 659
页数：5
相关论文
共 50 条
  • [31] ENERGY BAND DIAGRAM OF N-GAAS-N+-GE HETEROJUNCTIONS
    DZHAFAROV, TD
    STEPANOV.MI
    SUBASHIE.VK
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (05): : 608 - +
  • [32] On the distribution of {x/n } (Ⅱ)
    翟文广
    Chinese Science Bulletin, 1996, (01) : 1 - 5
  • [33] ON THE DISTRIBUTION OF (X/N)
    WANG, W
    CHINESE SCIENCE BULLETIN, 1993, 38 (19): : 1596 - 1600
  • [34] On the Distribution of {x/n}
    王炜
    Chinese Science Bulletin, 1993, (19) : 1596 - 1600
  • [35] RELATIONSHIP BETWEEN THE VOLTAGE RESPONSIVITY OF A DETECTOR WITH A POINT N-N+ JUNCTION AND THE ASYMMETRY OF ITS CURRENT-VOLTAGE CHARACTERISTIC
    ASHMONTAS, SP
    VINGELIS, LL
    GUOGA, VI
    OLEKAS, AP
    SUZHEDELIS, AV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (02): : 232 - 233
  • [36] High Power X-Band Monolithic GaAs p-i-n Balanced Limiter
    Li, Shifeng
    Wang, Leiyang
    Wu, Bang
    Guo, Dingyi
    Li, Yunfan
    Zhao, Yilin
    Cheng, Gary J.
    Liu, Feng
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2023, 38 (04) : 4623 - 4631
  • [37] BONDING CHARACTERISTICS OF ALKALI-METAL AMIDES IN SOLUTION AND IN THE SOLID-STATE - NMR AND X-RAY-DIFFRACTION STUDY OF N-LITHIOINDOLE N,N,N',N'-TETRAMETHYLETHYLENEDIAMINE, N-SODIOINDOLE N,N,N',N'-TETRAMETHYLETHYLENEDIAMINE, AND N-SODIOINDOLE N,N,N',N'',N''-PENTAMETHYLDIETHYLENETRIAMINE
    GREGORY, K
    BREMER, M
    BAUER, W
    SCHLEYER, PV
    LORENZEN, NP
    KOPF, J
    WEISS, E
    ORGANOMETALLICS, 1990, 9 (05) : 1485 - 1492
  • [38] AVALANCHE BREAKDOWN VOLTAGE OF GAAS P+-N-N+ DIODE STRUCTURES
    KUNO, HJ
    COLLARD, JR
    GOBAT, AR
    APPLIED PHYSICS LETTERS, 1969, 14 (11) : 343 - &
  • [39] CAPACITANCE VOLTAGE CHARACTERIZATION OF N-ZNSE/N-GAAS HETEROJUNCTIONS
    MATSUMOTO, T
    KOKUBO, N
    KAWAKAMI, K
    KATO, T
    JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) : 578 - 582
  • [40] CURRENT-VOLTAGE CHARACTERISTICS OF GAAS P-I-N AND N-I-N DIODES
    HRIVNAK, L
    MORVIC, M
    BETKO, J
    SOLID-STATE ELECTRONICS, 1977, 20 (05) : 417 - 419
12345