PRACTICAL INTERPRETATION OF X-RAY ROCKING CURVES FROM SEMICONDUCTOR HETEROEPITAXIAL LAYERS

被引：19
|
作者：
HALLIWELL, MAG
机构：
[1] Philips Analytical X-Ray, Almelo, 7602 EA
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1994年 / 58卷 / 03期
关键词：
D O I：
10.1007/BF00324368
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
X-ray rocking curves are widely used to study semiconductor heteroepitaxial structures. Examples are given of the use of rocking curves to investigate crystal growth problems, determine layer growth rates, confirm layer thicknesses and to determine the state of relaxation in layers which are above the critical thickness. The application of dynamic simulation and Fourier transformation to the raw data as tools to interpret data from multilayer structures is discussed.
引用
收藏
页码：135 / 140
页数：6
相关论文
共 50 条
  • [31] Measurement of X-ray rocking curves in the Bragg-Laue case
    Yoshizawa, Masami
    Fukamachi, Tomoe
    Hirano, Kenji
    Oba, Tsuyoshi
    Negishi, Riichirou
    Hirano, Keiichi
    Kawamura, Takaaki
    ACTA CRYSTALLOGRAPHICA SECTION A, 2008, 64 : 515 - 518
  • [32] DOUBLE CRYSTAL X-RAY ROCKING CURVES OF MULTIPLE LAYER STRUCTURES
    CHU, X
    TANNER, BK
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (12) : 765 - 771
  • [33] THE APPLICATION OF AUTOMATIC X-RAY ROCKING CURVES TO THE CHARACTERIZATION OF SILICON ON SAPPHIRE
    REY, A
    TRILHE, J
    BOREL, J
    JOURNAL OF CRYSTAL GROWTH, 1982, 60 (02) : 264 - 274
  • [34] X-ray diffraction in perfect t x l crystals.: Rocking curves
    Thorkildsen, G
    Larsen, HB
    ACTA CRYSTALLOGRAPHICA SECTION A, 1999, 55 : 840 - 854
  • [35] Interpretation of double x-ray diffraction peaks from InGaN layers
    Pereira, S
    Correia, MR
    Pereira, E
    O'Donnell, KP
    Alves, E
    Sequeira, AD
    Franco, N
    APPLIED PHYSICS LETTERS, 2001, 79 (10) : 1432 - 1434
  • [36] CONSTRUCTION OF EFFICIENCY CURVES FOR SEMICONDUCTOR X-RAY SPECTROMETERS
    CAMPBELL, JL
    MCNELLES, LA
    NUCLEAR INSTRUMENTS & METHODS, 1972, 98 (03): : 433 - &
  • [37] STRAIN PROFILES IN ION-DOPED SILICON OBTAINED FROM X-RAY ROCKING CURVES
    KYUTT, RN
    PETRASHEN, PV
    SOROKIN, LM
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 60 (02): : 381 - 389
  • [38] X-RAY INTERFERENCE MEASUREMENTS OF ULTRATHIN SEMICONDUCTOR LAYERS
    WIE, CR
    III-V HETEROSTRUCTURES FOR ELECTRONIC / PHOTONIC DEVICES, 1989, 145 : 467 - 473
  • [39] X-RAY INTERFERENCE MEASUREMENT OF ULTRATHIN SEMICONDUCTOR LAYERS
    WIE, CR
    CHEN, JC
    KIM, HM
    LIU, PL
    CHOI, YW
    HWANG, DM
    APPLIED PHYSICS LETTERS, 1989, 55 (17) : 1774 - 1776
  • [40] High-resolution diffuse x-ray scattering from threading dislocations in heteroepitaxial layers
    Danis, S
    Holy, V
    Zhong, Z
    Bauer, G
    Ambacher, O
    APPLIED PHYSICS LETTERS, 2004, 85 (15) : 3065 - 3067
12345