MODELING OF EDGE THRESHOLD VOLTAGE OF MESA-ISOLATED N-CHANNEL MOSFETS ON FULLY-DEPLETED THIN-FILM SOI

被引：1

作者：

PARK, JW ^{[1
]}

HAN, CH ^{[1
]}

KIM, CK ^{[1
]}

机构：

[1] KOREA ADV INST SCI & TECHNOL,DEPT ELECT ENGN,TAEJON 305701,SOUTH KOREA

来源：

SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 07期

关键词：

D O I：

10.1016/0038-1101(94)90206-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：1449 / 1452

页数：4

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