ENHANCED AND QUENCHED RAMAN-SCATTERING BY INTERFACE PHONONS IN SEMICONDUCTOR SUPERLATTICES - WHAT ARE THE DEFECTS

被引：8
|
作者：
GAMMON, D
SHI, L
MERLIN, R
AMBRAZEVICIUS, G
PLOOG, K
MORKOC, H
机构：
[1] UNIV MICHIGAN,DEPT PHYS,ANN ARBOR,MI 48109
[2] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
[3] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1988年 / 4卷 / 4-5期
关键词：
Interface Phonons - Photoexcitation - Semiconductor Superlattices;
D O I：
10.1016/0749-6036(88)90208-X
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report on the magnetic field and power density dependences of resonant Raman scattering by interface phonons in GaAs-AlxGa1-xAs superlattices. Strong photoexcitation leads to quenching of the nominally forbidden (and sample-dependent) scattering while a dramatic enhancement of the intensity is observed in the presence of a magnetic field. Alternative mechanisms that partially account for the experimental findings are discussed.
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页码：405 / 407
页数：3
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