DIAPHRAGM THICKNESS CONTROL IN SILICON PRESSURE SENSORS USING AN ANODIC-OXIDATION ETCH-STOP

被引：24
|
作者：
HIRATA, M
SUWAZONO, S
TANIGAWA, H
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 8A期
关键词：
D O I：
10.1149/1.2100814
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：2037 / 2041
页数：5
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