ELECTRICAL-RESISTIVITY AND STRUCTURAL-CHANGES IN AMORPHOUS GE1-XALX THIN-FILMS UNDER THERMAL ANNEALING

被引：11

作者：

CATALINA, F ^{[1
]}

AFONSO, CN ^{[1
]}

ORTIZ, C ^{[1
]}

机构：

[1] IBM CORP,RES LAB,SAN JOSE,CA 95120

来源：

THIN SOLID FILMS | 1988年 / 167卷 / 1-2期

关键词：

This work has beenp artiallys upportedb y CAYCIT (4/85)( Spain).W e would like .to thank Dr. J. E. E. Baglin from IBM; Yorktown Heights; N; Y; for the RBS measurementDs; r . J. L. Sacedonf rom IFM (CSIC); Madrid; for the AES depth profilea nd Mrs. M. A. Ollacarizquetafr om CIB (CSIC); for assistancwe ith theT EM;

D O I：

10.1016/0040-6090(88)90481-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：57 / 65

页数：9

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