GRAIN-SIZE AND ELECTRICAL-RESISTIVITY MEASUREMENTS ON ALUMINUM POLYCRYSTALLINE THIN-FILMS

被引：8
|
作者：
CHAVERRI, D
SAENZ, A
CASTANO, V
机构：
[1] UNIV COSTA RICA,ESCUELA FIS,SAN JOSE,COSTA RICA
[2] UNIV COSTA RICA,INST FIS,SAN JOSE,COSTA RICA
来源：
MATERIALS LETTERS | 1991年 / 12卷 / 05期
关键词：
D O I：
10.1016/0167-577X(91)90114-L
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Grain size as a function of thickness is analyzed by transmission electron microscopy for aluminum thin films deposited onto glass substrates. As expected, it increases with thickness but not as assumed by previous workers. Differential growth along directions parallel to the sample surface was not found. Electrical resistivity and temperature coefficient of resistivity data are reported and values for mean free path, coefficients of specularity and of transmission are calculated from direct fit to exact relationships using a three-dimensional conduction model.
引用
收藏
页码：344 / 348
页数：5
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