MODELING OF ELECTRON INJECTION AND TRANSPORT IN MULTIPLE-QUANTUM-WELL INFRARED PHOTODETECTORS

Physical mechanisms responsible for the operation and performance of Multiple Quantum Well (MQW) infrared photodetectors are studied using computer modeling. It is shown that the operating mechanism of MQW infrared photodetectors is associated with the redistribution of the potential across an MQW structure under the influence of absorbing radiation, which, in turn, results in the stimulation of electron injection from the emitter contact into the MQW region. The distribution of the electric field under the applied bias is highly nonuniform, with two distinct domains of high field, which controls the electron injection, and low field, supporting the transport of the injected electrons.