Quantum well infrared photodetectors

被引：0
|
作者：
Manasreh, MO [1 ]
Missous, M [1 ]
Stead, A [1 ]
Jelen, C [1 ]
Razeghi, M [1 ]
机构：
[1] USAF, Res Lab, PL, VTMR, Kirtland AFB, NM 87117 USA
来源：
LONG WAVELENGTH INFRARED DETECTORS AND ARRAYS: PHYSICS AND APPLICATIONS V | 1997年 / 33卷
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Infrared detectors based on intersubband transitions in n-type InGaAs/AlGaAs and InGaAs/InP multiple quantum wells are investigated. Samples were grown and tested to cover the spectral ranges of 3 - 13 mu m. Several techniques such as optical absorption, photoluminescence, photoconductivity, and capacitance-voltage measurements were employed to characterize the above structures. Devices were designed and fabricated from selected structures. The dark current and photoresponse were obtained for two devices.
引用
收藏
页码：69 / 80
页数：12
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