HIGH-POWER INP/INGAASP BURIED HETEROSTRUCTURE LASER FOR A WAVELENGTH OF 1.15-MU-M

被引：4
|
作者：
RAKOVICS, V
SERENYI, M
KOLTAI, F
PUSPOKI, S
LABADI, Z
机构：
[1] Research Institute for Technical Physics, the Hungarian Academy of Sciences, 1325 Budapest
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1994年 / 28卷 / 1-3期
基金：
匈牙利科学研究基金会;
关键词：
INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICES; HETEROSTRUCTURE; LIQUID PHASE EPITAXY;
D O I：
10.1016/0921-5107(94)90068-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
InP/InGaAsP buried heterostructure lasers for a wavelength of 1.15 mu m with optimized parameters can play an important role as pump sources for blue-upwards conversion fiber lasers. This paper reports the single-step liquid phase epitaxial growth and characterization of a double-channelled substrate InP/InGaAsP buried heterostructure laser diode for a wavelength of 1.15 mu m. Optimum conditions for separate growth of an InGaAsP buried active layer on the double-channelled InP substrate have been obtained. Output powers over 100 mW have been obtained by determining the appropriate cavity length and the reflectivity of the mirror facets. High power single-transverse mode operation and a nearly symmetrical beam of the lasers are advantageous for pumping of fiber lasers.
引用
收藏
页码：296 / 298
页数：3
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