CD DIFFUSED MESA-SUBSTRATE BURIED HETEROSTRUCTURE INGAASP/INP LASER

被引：0
|
作者：
YI, MB
LU, LT
KAPON, E
RAVNOY, Z
MARGALIT, S
YARIV, A
机构：
[1] California Inst of Technology,, Pasadena, CA, USA, California Inst of Technology, Pasadena, CA, USA
来源：
APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 04期
关键词：
FILMS - Conducting - OPTICAL COMMUNICATION - Laser Applications - SEMICONDUCTOR MATERIALS - Growth;
D O I：
10.1063/1.95620
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A new type of buried heterostructure InGaAsP/InP lasers grown by a single-step liquid phase epitaxy on Cd diffused mesa substrate is described. These lasers exhibit excellent current and optical confinement. Threshold currents as low as 15 mA are achieved for a laser with a 2- mu m-wide active region.
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页码：328 / 330
页数：3
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