SI OXIDE FORMATION AT MO/SI INTERFACE

被引：2
|
作者：
IWATA, S
YAMAMOTO, N
KOBAYASHI, N
机构：
来源：
JOURNAL OF THE JAPAN INSTITUTE OF METALS | 1987年 / 51卷 / 02期
关键词：
D O I：
10.2320/jinstmet1952.51.2_138
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：138 / 141
页数：4
相关论文
共 50 条
  • [1] Mo-Si interface formation by ion beam sputter deposition
    Köhler, A
    Gerlach, JW
    Höche, T
    Chassé, T
    Neumann, H
    Frank, W
    Wagner, G
    Rauschenbach, B
    MORPHOLOGICAL AND COMPOSITIONAL EVOLUTION OF THIN FILMS, 2003, 749 : 329 - 334
  • [2] AP-FIM STUDY OF SI OXIDE AND SI-SI OXIDE INTERFACE
    ADACHI, T
    TOMITA, M
    KURODA, T
    NAKAMURA, S
    JOURNAL DE PHYSIQUE, 1986, 47 (C-7): : 315 - 319
  • [3] Interface characterization of Mo/Si multilayers
    Zhao, Jiaoling
    He, Hongbo
    Wang, Hu
    Yi, Kui
    Wang, Bin
    Cui, Yun
    CHINESE OPTICS LETTERS, 2016, 14 (08)
  • [4] Interface characterization of Mo/Si multilayers
    赵娇玲
    贺洪波
    王虎
    易葵
    王斌
    崔云
    Chinese Optics Letters, 2016, 14 (08) : 102 - 105
  • [5] Interface roughness in Mo/Si multilayers
    Nedelcu, I.
    de Kruijs, R. W. E. van
    Yakshin, A. E.
    Tichelaar, F.
    Zoethout, E.
    Louis, E.
    Enkisch, H.
    Muellender, S.
    Bijkerk, F.
    THIN SOLID FILMS, 2006, 515 (02) : 434 - 438
  • [6] Formation of Mo5Si3 phase in Mo/Si multilayers
    Srivastava, AK
    Tripathi, P
    Nayak, M
    Lodha, GS
    Nandedkar, RV
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (09) : 5119 - 5126
  • [7] Formation of the Si/Cu interface
    Rojas, C
    Román, E
    Martin-Gago, JA
    SURFACE AND INTERFACE ANALYSIS, 2000, 30 (01) : 570 - 573
  • [8] Formation of the Si/Ti interface
    Palacio, C.
    Arranz, A.
    APPLIED SURFACE SCIENCE, 2007, 253 (09) : 4283 - 4288
  • [9] Swift heavy ion induced effects at Mo/Si interface and silicide formation
    Agarwal, Garima
    Kulshrestha, Vaibhav
    Jain, Rajkumar
    Kabiraj, D.
    Sulania, Indra
    Kulriya, Pawan
    Jain, I. P.
    SURFACE AND INTERFACE ANALYSIS, 2009, 41 (09) : 746 - 752
  • [10] SiO2 formation at the aluminum Oxide/Si(100) interface
    Chowdhuri, AR
    Takoudis, CG
    Klie, RF
    Browning, ND
    CRYSTALLINE OXIDE-SILICON HETEROSTRUCTURES AND OXIDE OPTOELECTRONICS, 2003, 747 : 335 - 340
12345