Interface characterization of Mo/Si multilayers

被引：0
|
作者：
赵娇玲 [1 ,2 ]
贺洪波 [1 ]
王虎 [1 ,2 ]
易葵 [1 ]
王斌 [1 ,2 ]
崔云 [1 ]
机构：
[1] Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences
[2] University of Chinese Academy of Sciences
来源：
Chinese Optics Letters | 2016年 / 14卷 / 08期
基金：
中国国家自然科学基金;
关键词：
Si; Mo; HRTEM;
D O I：
暂无
中图分类号：
O434.1 [X射线];
学科分类号：
070207 ; 0803 ;
摘要：
Complementary analysis techniques are applied in this work to study the interface structure of Mo/Si multilayers. The samples are characterized by grazing incident x-ray reflectivity, x-ray photoelectron spectroscopy,high-resolution transmission electron microscopy, and extreme ultraviolet reflectivity. The results indicate that the layer thickness is controlled well with small diffusion on the interface by forming MoSi;. Considering MoSi;as the interface composition, simulating the result of our four-layer model fits well with the measured reflectivity curve at 13.5 nm.
引用
收藏
页码：102 / 105
页数：4
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