IDENTIFICATION, ANNIHILATION, AND SUPPRESSION OF NUCLEATION SITES RESPONSIBLE FOR SILICON EPITAXIAL STACKING-FAULTS

被引：0

作者：

ROZGONYI, GA

DEYSHER, RP

PEARCE, CW

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

[2] WESTERN ELECT CO INC,PRINCETON,NJ 08540

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C262 / C262

页数：1

共 50 条

[41] FORMATION OF STACKING-FAULTS IN SELECTIVE OXIDATION OF SILICON
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[43] CONTROL OF STACKING FAULTS IN EPITAXIAL SILICON
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[44] FORMATION OF STACKING-FAULTS AND ENHANCED DIFFUSION IN OXIDATION OF SILICON
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[45] GENERALIZED WANNIER FUNCTIONS AT INTERFACES - STACKING-FAULTS IN SILICON
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[47] ANOMALOUS TEMPERATURE EFFECT OF OXIDATION STACKING-FAULTS IN SILICON
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[48] FORMATION OF STACKING-FAULTS AND DISLOCATIONS IN PHOSPHORUS DIFFUSED SILICON
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LAU, SS
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[49] ELIMINATION OF STACKING-FAULTS BY PREOXIDATION GETTERING OF SILICON WAFERS
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[50] DEFECT STATES ASSOCIATED WITH DISLOCATIONS AND STACKING-FAULTS IN SILICON
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