EFFECT OF MISFIT STRAIN ON PHYSICAL-PROPERTIES OF INGAP GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY

被引：36
|
作者：
OZASA, K
YURI, M
TANAKA, S
MATSUNAMI, H
机构：
[1] Department of Electrical Engineering, Kyoto University, Sakyo-ku, Kyoto 606, Yoshidahonmachi
来源：
JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 01期
关键词：
D O I：
10.1063/1.347100
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effects of misfit strain on physical properties (lattice parameters, photoluminescence, and electron mobility) are discussed for In 1-xGaxP epilayers with a constant thickness of around 0.75 μm grown by metalorganic molecular-beam epitaxy on GaAs(001) substrates. The elastic accommodation of misfit strain is observed in the analysis of lattice parameters and energy-band-gap shift. Tensile strain is relaxed more easily than the compressive strain. Theoretical predictions of critical thickness for elastic-strain accommodation and of energy-band-gap shift agree well with experimental results. The energy-band-gap shift and electron mobility are relatively insensitive to dislocations generated by relaxation of the misfit strain.
引用
收藏
页码：107 / 111
页数：5
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