ELECTRON-PHONON SCATTERING IN ASYMMETRIC SEMICONDUCTOR QUANTUM-WELL STRUCTURES

被引：10
|
作者：
SHI, JJ
LIU, ZX
PAN, SH
机构：
[1] CHINESE ACAD SCI,INST PHYS,BEIJING 100080,PEOPLES R CHINA
[2] CCAST,WORLD LAB,BEIJING 100080,PEOPLES R CHINA
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1995年 / 17卷 / 03期
关键词：
D O I：
10.1006/spmi.1995.1058
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We calculate scattering rates of intrasubband and intersubband electronic transitions in asymmetric single quantum wells (QW's) and step QW's due to interface phonons, confined bulk-like LO phonons, and half-space LO phonons. The relative importance of the different phonon modes is analyzed. The results show that the electron-phonon scattering rates have intimate relation to the QW parameters. (C) 1995 Academic Press Limited
引用
收藏
页码：329 / 334
页数：6
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