Electron-phonon interaction and electron mobility in quantum-well type-II PbTe/PbS structures

被引：1
|
作者：
Bondarenko, VV [1 ]
Zabudskii, VV [1 ]
Sizov, FF [1 ]
机构：
[1] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-252028 Kiev, Ukraine
来源：
SEMICONDUCTORS | 1998年 / 32卷 / 06期
关键词：
D O I：
10.1134/1.1187461
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Electron mobilities in PbTe layers were calculated, taking into account electron scattering by longitudinal polar optical phonons, for low-dimensional structures - multiple PbTe/PbS quantum wells, which are type-II structures. Comparison with the electron mobilities obtained from Hall coefficient and magnetoresistance investigations in undoped multiple PbTe/PbS quantum wells versus the magnetic field intensity showed good agreement between the computed and experimental results for these structures. (C) 1998 American Institute of Physics.
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收藏
页码：665 / 667
页数：3
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