Electron-phonon interaction and electron mobility in quantum-well type-II PbTe/PbS structures

被引：1

作者：

Bondarenko, VV ^{[1
]}

Zabudskii, VV ^{[1
]}

Sizov, FF ^{[1
]}

机构：

[1] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-252028 Kiev, Ukraine

来源：

SEMICONDUCTORS | 1998年 / 32卷 / 06期

关键词：

D O I：

10.1134/1.1187461

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Electron mobilities in PbTe layers were calculated, taking into account electron scattering by longitudinal polar optical phonons, for low-dimensional structures - multiple PbTe/PbS quantum wells, which are type-II structures. Comparison with the electron mobilities obtained from Hall coefficient and magnetoresistance investigations in undoped multiple PbTe/PbS quantum wells versus the magnetic field intensity showed good agreement between the computed and experimental results for these structures. (C) 1998 American Institute of Physics.

引用

页码：665 / 667

页数：3

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