Electron-phonon interaction and electron mobility in quantum-well type-II PbTe/PbS structures

被引:1
|
作者
Bondarenko, VV [1 ]
Zabudskii, VV [1 ]
Sizov, FF [1 ]
机构
[1] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-252028 Kiev, Ukraine
关键词
D O I
10.1134/1.1187461
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Electron mobilities in PbTe layers were calculated, taking into account electron scattering by longitudinal polar optical phonons, for low-dimensional structures - multiple PbTe/PbS quantum wells, which are type-II structures. Comparison with the electron mobilities obtained from Hall coefficient and magnetoresistance investigations in undoped multiple PbTe/PbS quantum wells versus the magnetic field intensity showed good agreement between the computed and experimental results for these structures. (C) 1998 American Institute of Physics.
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页码:665 / 667
页数:3
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