CHARACTERISTICS WITH NEGATIVE DIFFERENTIAL RESISTANCE OF A DEVICE USING A SI-SIO2 STRUCTURE

被引：0
|
作者：
TIEN, ND [1 ]
机构：
[1] HANOI POLYTECH INST,MICROELECTR LAB,HANOI,VIETNAM
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1985年 / 90卷 / 01期
关键词：
D O I：
10.1002/pssa.2210900166
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：K103 / K105
页数：3
相关论文
共 50 条
  • [41] OPTICAL WAVE-GUIDE BASED ON SI-SIO2 STRUCTURE
    ANIKIN, VI
    ZHITKOV, PM
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1990, 16 (09): : 89 - 91
  • [42] FTIR studies of Si-SiO2 interface structure and growth.
    Queeney, K
    Weldon, MK
    Chabal, YJ
    Stefanov, BB
    Raghavachari, K
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1999, 218 : U462 - U462
  • [43] Effect of ultrasonic treatment on the defect structure of the Si-SiO2 system
    Kropman, D
    Poll, V
    Tambek, L
    Karner, T
    Abru, U
    ULTRASONICS, 1998, 36 (10) : 1021 - 1025
  • [44] Characterizing slow state near Si-SiO2 in MOS structure
    Guenifi, N.
    Bauza, D.
    Mahamdi, R.
    PHOSPHORUS SULFUR AND SILICON AND THE RELATED ELEMENTS, 2018, 193 (02) : 88 - 91
  • [45] ELECTRONIC-STRUCTURE O MODEL SI-SIO2 INTERFACES
    HERMAN, F
    HENDERSON, DJ
    KASOWSKI, RV
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 304 - 304
  • [46] The peculiarities of Si/SiO2 interfaces in the Si-SiO2 systems with Si nanocrystals
    Kryshtab, T.
    Gomez Gasga, G.
    Korsunska, N.
    Baran, M.
    Kirillova, S.
    Khomenkova, L.
    Sachenko, A.
    Stara, T.
    Venger, Y.
    Emirov, Y.
    Goldstein, Y.
    Savir, E.
    Jedrzejewski, J.
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2010, 174 (1-3): : 97 - 101
  • [47] BARRIER HEIGHTS AT THE SI-SIO2 AND POLY-SI-SIO2 INTERFACES
    BHATTACHARYYA, A
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1993, 140 (01): : K5 - K9
  • [48] SURFACE STATE AND SURFACE RECOMBINATION VELOCITY CHARACTERISTICS OF SI-SIO2 INTERFACES
    ROSIER, LL
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (09) : 505 - &
  • [49] SURFACE STATE AND SURFACE RECOMBINATION VELOCITY CHARACTERISTICS OF SI-SIO2 INTERFACES
    ROSIER, LL
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) : 260 - +
  • [50] OPTICAL MODELING OF SI-SIO2 INTERFACE
    KALNITSKY, A
    TAY, SP
    ELLUL, JP
    CHOGSAWANGVIROD, S
    IRENE, EA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) : C362 - C363
12345