FTIR studies of Si-SiO2 interface structure and growth.

被引：0

作者：

Queeney, K ^{[1
]}

Weldon, MK ^{[1
]}

Chabal, YJ ^{[1
]}

Stefanov, BB ^{[1
]}

Raghavachari, K ^{[1
]}

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 1999年 / 218卷

关键词：

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

216-COLL

引用

页码：U462 / U462

页数：1

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