NEW FLOATING-GATE ALGAAS/GAAS MEMORY DEVICES WITH GRADED-GAP ELECTRON INJECTOR AND LONG RETENTION TIMES

被引：27
|
作者：
CAPASSO, F
BELTRAM, F
MALIK, RJ
WALKER, JF
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 08期
关键词：
D O I：
10.1109/55.749
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：377 / 379
页数：3
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