EFFECTS OF THE VARIATION IN THE DOSE OF THE INJECTOR IMPLANT ON THE ENDURANCE CHARACTERISTICS OF FLOATING-GATE ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY DEVICES

被引：0

作者：

BHATTACHARYYA, A

机构：

[1] Department of Physics, Jadavpur University, Calcutta

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 4A期

关键词：

EEPROM; ENDURANCE; DEVICE PHYSICS;

D O I：

10.1143/JJAP.33.1793

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have experimentally observed a dependence of the endurance characteristics of floating gate electrically erasable programmable read only memory (EEPROM) devices on the dose of the injector implant. With an increase in the implantation dose, the memory window closure is enhanced. This phenomenon is explained theoretically by calculating the change in threshold voltage and hence, the amount of charge injected through the tunnel oxide during write/erase cycles for different implantation doses in the injector region.

引用

页码：1793 / 1797

页数：5

共 31 条

[1] Effects of the variation in the dose of the injector implant on the endurance characteristics of floating gate electrically erasable programmable read only memory devices
Bhattacharyya, Anjan, 1793, JJAP, Minato-ku, Japan (33):
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