Effects of the variation in the dose of the injector implant on the endurance characteristics of floating gate electrically erasable programmable read only memory devices

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[1] Bhattacharyya, Anjan

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Bhattacharyya, Anjan | 1793年 / JJAP, Minato-ku, Japan卷 / 33期

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共 27 条

[1] EFFECTS OF THE VARIATION IN THE DOSE OF THE INJECTOR IMPLANT ON THE ENDURANCE CHARACTERISTICS OF FLOATING-GATE ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY DEVICES
BHATTACHARYYA, A
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (4A): : 1793 - 1797
[2] ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY.
Ford, David C.
Conference Record - Midcon, 1980,
[3] Suppression of oxide encroachment into floating gate by shallow trench isolation recess in an electrically erasable programmable read only memory cell
Kim, Youn-Jang
Lee, Junghwan
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 153 (07) : G603 - G605
[4] FABRICATION AND OPERATIONAL STABILITY OF INVERTED FLOATING GATE E2PROM (ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY)
KANG, JY
LEE, SS
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (04): : 627 - 632
[5] Thermal stress analysis of floating-gate tunneling oxide electrically erasable programmable read only memory during manufacturing process
Zong, XF
Wang, X
Weng, YM
Yan, RJ
Tang, GA
Zhang, ZQ
CHINESE PHYSICS LETTERS, 1998, 15 (10) : 767 - 769
[6] MEMORY EFFECTS OF SILICON-IMPLANTED OXIDES FOR ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY APPLICATIONS
HAO, MY
HWANG, HS
LEE, JC
APPLIED PHYSICS LETTERS, 1993, 62 (13) : 1530 - 1532
[7] ELECTRICALLY ERASABLE BURIED-GATE NONVOLATILE READ-ONLY MEMORY
NEUGEBAUER, CA
BURGESS, JF
STEIN, L
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (05) : 613 - 618
[8] OXIDE RELIABILITY CRITERION FOR THE EVALUATION OF THE ENDURANCE PERFORMANCE OF ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORIES
PAPADAS, C
GHIBAUDO, G
PANANAKAKIS, G
RIVA, C
MORTINI, P
JOURNAL OF APPLIED PHYSICS, 1992, 71 (09) : 4589 - 4593
[9] A Study of Erasing in Programmable Electrically Erasable Read Only Memory (EEPROM) with Very Thin Oxide Tunnel
Latreche, S.
Bounab, A. Mansour
Benouakta, M.
AFRICAN REVIEW OF PHYSICS, 2008, 2 : 56 - 57
[10] A Highly Scalable Single Poly-Silicon Embedded Electrically Erasable Programmable Read Only Memory With Tungsten Control Gate by Full CMOS Process
Chung, Chih-Ping
Chang-Liao, Kuei-Shu
IEEE ELECTRON DEVICE LETTERS, 2015, 36 (04) : 336 - 338

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