CHARACTERIZATION OF ZN3P2 THIN-FILMS

Thin films of Zn3P2 are prepared by thermal evaporation at approximately 10(-6) torr and stoichiometry of the material of good films is checked by energy dispersive analysis by X-rays (EDAX) studies. The band gap of the as-deposited film material determined from optical absorption study comes out to be approximately 1.55 eV. The current-voltage (I-V) characteristics of the films at various temperatures are studied and activation energy has been determined. Electrochemical characterization using geometry Ag/Zn3P2-2I-/I2/Pt has been investigated and Mott-Schottky plot is used to evaluate the relevant semiconductor parameters (viz. V(fb), V(b), N(D), N(c), etc.).