PREPARATION AND CHARACTERIZATION OF CD3P2 THIN-FILMS

Cd3P2 thin films have been deposited on glass substrates by electron beam evaporation technique. The amorphous as-deposited films, after annealing in vacuum in the temperature range 180-200-degrees-C, developed the crystallinity. Such polycrystalline films exhibited preferential orientation along the (224 400) direction. The films indicated n-type conductivity with resistivity value around 1.6 OMEGA cm at room temperature. The composition, ionicity, and Madelung constant, calculated from x-ray photoelectron spectroscopy data, are Cd3P1.7, 0.08, and 1.68, respectively. From the optical (R and T) and modulation (derivative) spectra, the different parameters, namely, refractive index (n approximately 3.83), band gap (E(g)=0.61 eV), band splitting parameters (crystal field DELTA(CF)=0.03 eV, spin-orbit DELTA0=0.08 eV) have been obtained. Photoluminescence emission related to band-to-band transition is observed around 0.51 eV.