OHMIC CONTACTS TO P-TYPE AND N-TYPE GASB

被引：27
|
作者：
HEINZ, C
机构：
来源：
INTERNATIONAL JOURNAL OF ELECTRONICS | 1983年 / 54卷 / 02期
关键词：
D O I：
10.1080/00207218308938720
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：247 / 254
页数：8
相关论文
共 50 条
  • [41] PREPARATION OF OHMIC CONTACTS FOR N-TYPE GAAS
    LAWLEY, KL
    HEILIG, JA
    KLEIN, DL
    [J]. ELECTROCHEMICAL TECHNOLOGY, 1967, 5 (7-8): : 374 - +
  • [42] Nanocrystal-based Ohmic contacts on n and p-type germanium
    Kishore, V. Pavan
    Paramahans, Prashanth
    Sadana, Sunny
    Ganguly, Udayan
    Lodha, Saurabh
    [J]. APPLIED PHYSICS LETTERS, 2012, 100 (14)
  • [43] OHMIC CONTACTS TO N-TYPE IN0.5GA0.5P
    REN, F
    KUO, JM
    PEARTON, SJ
    FULLOWAN, TR
    LOTHIAN, JR
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (02) : 243 - 247
  • [44] W and WSix Ohmic contacts on p- and n-type GaN
    Cao, XA
    Ren, F
    Pearton, SJ
    Zeitouny, A
    Eizenberg, M
    Zolper, JC
    Abernathy, CR
    Han, J
    Shul, RJ
    Lothian, JR
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (04): : 1221 - 1225
  • [45] Metallization options and annealing temperatures for low contact resistance ohmic contacts to n-type GaSb
    Ikossi, K
    Goldenberg, M
    Mittereder, J
    [J]. 2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS, 2001, : 252 - 255
  • [46] SCHOTTKY-BARRIER OF NONUNIFORM CONTACTS TO N-TYPE AND P-TYPE SILICON
    THOMPSON, RD
    TU, KN
    [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) : 4285 - 4288
  • [47] Metallization options and annealing temperatures for low contact resistance ohmic contacts to n-type GaSb
    Ikossi, K
    Goldenberg, M
    Mittereder, J
    [J]. SOLID-STATE ELECTRONICS, 2002, 46 (10) : 1627 - 1631
  • [48] n-Type Ohmic contact and p-type Schottky contact of monolayer InSe transistors
    Shi, Bowen
    Wang, Yangyang
    Li, Jingzhen
    Zhang, Xiuying
    Yan, Jiahuan
    Liu, Shiqi
    Yang, Jie
    Pan, Yuanyuan
    Zhang, Han
    Yang, Jinbo
    Pan, Feng
    Lu, Jing
    [J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2018, 20 (38) : 24641 - 24651
  • [49] ELECTROPOLISHING OF N-TYPE GERMANIUM AND P-TYPE AND N-TYPE SILICON
    KLEIN, DL
    KOLB, GA
    POMPLIANO, LA
    SULLIVAN, MV
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (03) : C60 - C60
  • [50] P-TYPE OHMIC CONTACTS TO ALGAAS/GAAS HETEROSTRUCTURES
    REEMTSMA, JH
    HEIME, K
    SCHLAPP, W
    WEIMANN, G
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 1988, 4 (02) : 197 - 199
12345