RAMAN-SCATTERING MEASUREMENT OF FREE-CARRIER CONCENTRATION AND OF IMPURITY LOCATION IN BORON-IMPLANTED SILICON

被引：22
|
作者：
BESERMAN, R [1 ]
BERNSTEIN, T [1 ]
机构：
[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,HAIFA,ISRAEL
来源：
JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 04期
关键词：
D O I：
10.1063/1.323876
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1548 / 1550
页数：3
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