RAMAN-SCATTERING MEASUREMENT OF FREE-CARRIER CONCENTRATION AND OF IMPURITY LOCATION IN BORON-IMPLANTED SILICON

被引：22

作者：

BESERMAN, R ^{[1
]}

BERNSTEIN, T ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,HAIFA,ISRAEL

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 04期

关键词：

D O I：

10.1063/1.323876

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1548 / 1550

页数：3

共 50 条

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