ELECTROMIGRATION IN AL THIN-FILMS

被引：4

作者：

PAI, ST

MARTON, JP

BEATTY, DC

机构：

[1] WELWYN CANADA LTD,LONDON N6A 4G7,ONTARIO,CANADA

[2] MCMASTER UNIV,HAMILTON L8S 4M1,ONTARIO,CANADA

来源：

CANADIAN JOURNAL OF PHYSICS | 1977年 / 55卷 / 02期

关键词：

D O I：

10.1139/p77-014

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：116 / 128

页数：13

共 50 条

[21] SIMPLE ESTIMATE OF ELECTROMIGRATION FAILURE IN METALLIC THIN-FILMS
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[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1224 - 1225
[22] ON THE CURRENT-DENSITY DEPENDENCE OF ELECTROMIGRATION IN THIN-FILMS
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[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 107 (02): : K175 - K179
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[27] ELECTROMIGRATION IN A1/CU THIN-FILMS WITH POLYIMIDE PASSIVATION
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[29] OXIDATION-INDUCED ELECTROMIGRATION FAILURE OF THIN-FILMS OF ALUMINUM
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[30] ELECTROMIGRATION-INDUCED VACANCY BEHAVIOR IN UNPASSIVATED THIN-FILMS
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