DEGRADATION BY ELECTROMIGRATION IN PASSIVATED AL-1 WT-PERCENT SI THIN-FILMS

被引：5

作者：

LI, Z ^{[1
]}

BAUER, CL ^{[1
]}

MAHAJAN, S ^{[1
]}

MILNES, AG ^{[1
]}

机构：

[1] CARNEGIE MELLON UNIV,DEPT ELECT & COMP ENGN,PITTSBURGH,PA 15213

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 03期

关键词：

D O I：

10.1063/1.107936

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Time evolution of the fractional change of electrical resistance of passivated Al-1 wt% Si thin-film conductors is characterized by five distinct stages: (1) undetectable change during an incubation period, (2) subsequent linear increase, (3) saturation, (4) abrupt decrease when applied current is interrupted or reversed, and (5) erratic fluctuations at extended times. Results are interpreted in terms of generation of localized tensile and compressive stress by electromigration, resulting in (reversible) hole formation at grain boundary triple junctions, followed by complex combinations of hole movement, coalescence, and annihilation.

引用

页码：276 / 278

页数：3

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