COMPARISON OF SI(111) SURFACES PREPARED USING AQUEOUS-SOLUTIONS OF NH4F VERSUS HF

被引：466
|
作者：
HIGASHI, GS
BECKER, RS
CHABAL, YJ
BECKER, AJ
机构：
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 15期
关键词：
D O I：
10.1063/1.105155
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Vacuum scanning tunneling microscopy has been used to investigate the hydrogen-terminated Si(111) surfaces obtained upon dissolution of the native oxide in HF and NH4F solutions. Whereas etching in aqueous HF acid produces an atomically rough surface, comparable treatment in NH4F results in atomically flat surfaces. These atomically flat surfaces are extremely well ordered and exhibit terraces which extend thousands of angstroms.
引用
收藏
页码：1656 / 1658
页数：3
相关论文
共 50 条
  • [1] REACTION OF NH4F/HF SOLUTIONS ON SI(100) AND SI(111) SURFACES
    GRAF, D
    BAUERMAYER, S
    SCHNEGG, A
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (04): : 940 - 944
  • [2] Characterization of si(111) surfaces treated in NH4F and NH4HF2 solutions
    Tomita, N
    Adachi, S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2002, 149 (04) : G245 - G250
  • [3] MORPHOLOGY OF ANODICALLY ETCHED SI(111) SURFACES - A STRUCTURAL COMPARISON OF NH4F VERSUS HF ETCHING
    HOUBERTZ, R
    MEMMERT, U
    BEHM, RJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (06): : 3145 - 3148
  • [4] Analyses of HF/NH4F buffer-treated Si(111) surfaces using XPS, REM and SIMS
    Ma, Y
    Eades, JA
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1996, 62 (03): : 247 - 253
  • [5] ETCHING MECHANISM AND ATOMIC-STRUCTURE OF H-SI(111) SURFACES PREPARED IN NH4F
    ALLONGUE, P
    KIELING, V
    GERISCHER, H
    ELECTROCHIMICA ACTA, 1995, 40 (10) : 1353 - 1360
  • [6] The behaviour of permalloy in NH4F/HF solutions
    van den Meerakker, JEAM
    Baarslag, PC
    CORROSION SCIENCE, 2000, 42 (07) : 1169 - 1183
  • [7] On the potential-dependent etching of Si(111) in aqueous NH4F solution
    Houbertz, R
    Memmert, U
    Behm, RJ
    SURFACE SCIENCE, 1998, 396 (1-3) : 198 - 211
  • [8] AN INFRARED STUDY OF THIN-FILM FORMATION ON SI AND GE SURFACES TREATED WITH AQUEOUS NH4F AND HF
    YOTA, J
    BURROWS, VA
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (10) : 7369 - 7371
  • [9] The effects of treatment of Si(111) surfaces with NH4F solution on Schottky diode parameters
    Hadjersi, T
    Cheraga, H
    Chergui, W
    APPLIED SURFACE SCIENCE, 2004, 235 (1-2) : 197 - 201
  • [10] Behavior of fluorine on silicon (100) surfaces etched with NH4F aqueous solutions
    Ikeda, Masanori
    Iwamoto, Sachiya
    Nagashima, Naoyuki
    Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), 2000, 83 (07): : 41 - 47
12345