COMPARISON OF SI(111) SURFACES PREPARED USING AQUEOUS-SOLUTIONS OF NH4F VERSUS HF

被引：466
|
作者：
HIGASHI, GS
BECKER, RS
CHABAL, YJ
BECKER, AJ
机构：
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 15期
关键词：
D O I：
10.1063/1.105155
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Vacuum scanning tunneling microscopy has been used to investigate the hydrogen-terminated Si(111) surfaces obtained upon dissolution of the native oxide in HF and NH4F solutions. Whereas etching in aqueous HF acid produces an atomically rough surface, comparable treatment in NH4F results in atomically flat surfaces. These atomically flat surfaces are extremely well ordered and exhibit terraces which extend thousands of angstroms.
引用
收藏
页码：1656 / 1658
页数：3
相关论文
共 50 条
  • [31] ULTRATHIN LUMINESCENT NANOPOROUS SILICON ON N-SI - PH DEPENDENT PREPARATION IN AQUEOUS NH4F SOLUTIONS
    DITTRICH, T
    RAUSCHER, S
    TIMOSHENKO, VY
    RAPPICH, J
    SIEBER, I
    FLIETNER, H
    LEWERENZ, HJ
    APPLIED PHYSICS LETTERS, 1995, 67 (08) : 1134 - 1136
  • [32] Optical and electrical study of CdZnTe surfaces passivated by KOH and NH4F solutions
    Zazvorka, J.
    Franc, J.
    Statelov, M.
    Pekarek, J.
    Veis, M.
    Moravec, P.
    Masek, K.
    APPLIED SURFACE SCIENCE, 2016, 389 : 1214 - 1219
  • [33] Ultrathin luminescent nanoporous silicon on n-Si: pH dependent preparation in aqueous NH4F solutions
    Hahn-Meitner-Inst, Berlin, Germany
    Appl Phys Lett, 8 (1134-1136):
  • [34] ATOMIC RESOLUTION IMAGES OF H-TERMINATED SI(111) SURFACES IN AQUEOUS-SOLUTIONS
    ITAYA, K
    SUGAWARA, R
    MORITA, Y
    TOKUMOTO, H
    APPLIED PHYSICS LETTERS, 1992, 60 (20) : 2534 - 2536
  • [35] In situ infrared observation of etching and oxidation processes on Si surfaces in NH4F solution
    Niwano, M
    Kondo, Y
    Kimura, A
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (04) : 1555 - 1559
  • [36] Step edge structures on Si(112) and (113) surfaces treated in NH4F solution
    Fujita, Ken, 1600, Publ by JJAP, Minato-ku, Japan (33):
  • [37] Electronic and surface properties during the etch-back of anodic oxides on Si(111) surfaces in 40% NH4F solution
    Yang, F.
    Roodenko, K.
    Hinrichs, K.
    Rappich, J.
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2007, 17 (04) : S56 - S60
  • [38] WET CHEMICAL ETCHING OF SI(100) SURFACES IN CONCENTRATED NH4F SOLUTION - FORMATION OF (2X1)H RECONSTRUCTED SI(100) TERRACES VERSUS (111) FACETING
    NEUWALD, U
    HESSEL, HE
    FELTZ, A
    MEMMERT, U
    BEHM, RJ
    SURFACE SCIENCE, 1993, 296 (01) : L8 - L14
  • [39] Extraction of REE by using solutions of H2SO4 and NH4F
    Egorov, N. B.
    Dyachenko, A. N.
    Akimov, D. V.
    Kiselev, A. D.
    Obmuch, K. V.
    Chalov, S. A.
    1ST INTERNATIONAL SYMPOSIUM ON INORGANIC FLUORIDES: CHEMISTRY AND TECHNOLOGY, ISIF 2014, 2014, 11 : 15 - 19
  • [40] A SURFACE IR STUDY OF INORGANIC FILM FORMATION GAAS, SILICON AND GERMANIUM BY AQUEOUS NH4F, AND HF
    BURROWS, VA
    YOTA, J
    THIN SOLID FILMS, 1990, 193 (1-2) : 371 - 381
12345