INVESTIGATION OF EXCESS NOISE IN ULTRATHIN METAL-FILMS DEPOSITED ONTO SINGLE-CRYSTAL SILICON

被引：2
|
作者：
CHO, NI
BENE, RW
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 05期
关键词：
D O I：
10.1063/1.344343
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：2037 / 2044
页数：8
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