LCAO ANALYSIS OF DISLOCATION-RELATED EPR-SPECTRA IN DEFORMED SILICON

被引：0
|
作者：
KISIELOWSKIKOMMERICH, C
机构：
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1989年 / 104期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A LCAO analysis of reconstruction defects, threefold coordinated vacancies (V3c) and their complexes in terms of one electron "defect molecules", leads to microscopic models for the dislocation related EPR-centers Si-K1, Si-K2 and Si-Y. It is proposed to identify Si-Y with V3c, Si-K1 with V3c trapped at a reconstruction defect and Si-K2 with multi-vacancy complexes (n*V3c). The results suggest that impurities are involved in the defect formation and that they are preferably formed in the core of those 30-degrees partial dislocations which are part of screws.
引用
收藏
页码：187 / 192
页数：6
相关论文
共 50 条
  • [31] Structural defects and dislocation-related photoluminescence in erbium-implanted silicon
    Sobolev, NA
    Emel'yanov, AM
    Shek, EI
    Sakharov, VI
    Serenkov, IT
    Nikolaev, YA
    Vdovin, VI
    Yugova, TG
    Makovijchuk, MI
    Parshin, EO
    Pizzini, S
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 91 : 167 - 169
  • [32] Time-resolved measurements of dislocation-related photoluminescence bands in silicon
    Steinman, E. A.
    Kenyon, A. J.
    Tereshchenko, A. N.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 8, 2009, 6 (08): : 1811 - +
  • [33] HYDROGEN PASSIVATION OF THE DISLOCATION-RELATED D-BAND LUMINESCENCE IN SILICON
    WERONEK, K
    WEBER, J
    QUEISSER, HJ
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1993, 137 (02): : 543 - 548
  • [34] The Excitation Efficiency for Dislocation-Related Luminescence Centers in Silicon with Oxygen Precipitates
    N. A. Sobolev
    A. E. Kalyadin
    K. F. Shtel’makh
    E. I. Shek
    V. I. Sakharov
    I. T. Serenkov
    Semiconductors, 2023, 57 : 268 - 271
  • [35] Silicon light-emitting diodes based on dislocation-related luminescence
    Kveder, V
    Badylevich, M
    Schröter, W
    Seibt, M
    Steinman, E
    Izotov, A
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (05): : 901 - 910
  • [36] Enhancement of room temperature dislocation-related photoluminescence of electron irradiated silicon
    Xiang, Luelue
    Li, Dongsheng
    Jin, Lu
    Wang, Shuming
    Yang, Deren
    JOURNAL OF APPLIED PHYSICS, 2013, 113 (03)
  • [37] SIMULATION AND ANALYSIS OF EPR-SPECTRA OF PARAMAGNETIC-IONS IN POWDERS
    VANVEEN, G
    JOURNAL OF MAGNETIC RESONANCE, 1978, 30 (01) : 91 - 109
  • [38] EPR-SPECTRA OF HEAT-TREATMENT CENTERS IN OXYGEN-RICH SILICON
    MULLER, SH
    SPRENGER, M
    SIEVERTS, EG
    AMMERLAAN, CAJ
    SOLID STATE COMMUNICATIONS, 1978, 25 (12) : 987 - 990
  • [39] Effect of ion doping on the dislocation-related photoluminescence in Si+-implanted silicon
    Mikhaylov, A. N.
    Belov, A. I.
    Korolev, D. S.
    Timofeeva, A. O.
    Vasiliev, V. K.
    Shushunov, A. N.
    Bobrov, A. I.
    Pavlov, D. A.
    Tetelbaum, D. I.
    Shek, E. I.
    SEMICONDUCTORS, 2014, 48 (02) : 199 - 203
  • [40] Dislocation-related luminescence in silicon, caused by implantation of oxygen ions and subsequent annealing
    N. A. Sobolev
    B. Ya. Ber
    A. M. Emel’yanov
    A. P. Kovarskiĭ
    E. I. Shek
    Semiconductors, 2007, 41 : 285 - 287
12345