LCAO ANALYSIS OF DISLOCATION-RELATED EPR-SPECTRA IN DEFORMED SILICON

被引：0
|
作者：
KISIELOWSKIKOMMERICH, C
机构：
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1989年 / 104期
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暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A LCAO analysis of reconstruction defects, threefold coordinated vacancies (V3c) and their complexes in terms of one electron "defect molecules", leads to microscopic models for the dislocation related EPR-centers Si-K1, Si-K2 and Si-Y. It is proposed to identify Si-Y with V3c, Si-K1 with V3c trapped at a reconstruction defect and Si-K2 with multi-vacancy complexes (n*V3c). The results suggest that impurities are involved in the defect formation and that they are preferably formed in the core of those 30-degrees partial dislocations which are part of screws.
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页码：187 / 192
页数：6
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