COMPUTER-SIMULATION MODEL OF THE STRUCTURE OF ION-IMPLANTED IMPURITIES IN SEMICONDUCTORS

被引：12
|
作者：
ROMAN, E [1 ]
MAJLIS, N [1 ]
机构：
[1] INT CTR THEORET PHYS,TRIESTE,ITALY
来源：
SOLID STATE COMMUNICATIONS | 1983年 / 47卷 / 04期
关键词：
D O I：
10.1016/0038-1098(83)90557-4
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
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页码：259 / 261
页数：3
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