COMPUTER-SIMULATION MODEL OF THE STRUCTURE OF ION-IMPLANTED IMPURITIES IN SEMICONDUCTORS

被引：12

作者：

ROMAN, E ^{[1
]}

MAJLIS, N ^{[1
]}

机构：

[1] INT CTR THEORET PHYS,TRIESTE,ITALY

来源：

SOLID STATE COMMUNICATIONS | 1983年 / 47卷 / 04期

关键词：

D O I：

10.1016/0038-1098(83)90557-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

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页码：259 / 261

页数：3

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