LASER ANNEALING OF ION-IMPLANTED SEMICONDUCTORS

被引：3

|

作者：

SEALY, BJ

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1980年 / 48卷 / 04期

关键词：

D O I：

10.1016/0022-0248(80)90276-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

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页码：655 / 665

页数：11

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