CURRENT-VOLTAGE CHARACTERISTICS OF P-N JUNCTIONS IN HEAVILY DOPED GALLIUM ARSENIDE

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作者：

VUL, BM

ZAVARITSKAYA, EI

SHOTOV, AP

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SOVIET PHYSICS-SOLID STATE | 1964年 / 6卷 / 05期

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：1146 / 1151

页数：6

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