HARMONIC AND INTERMODULATION GENERATION IN GAAS, INP, INGAAS AND SI SEMICONDUCTORS

被引：0
|
作者：
ABUELMA'ATTI, MT
机构：
[1] King Fahd University of Petroleum and Minerals, Dhahran, 31261
来源：
SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 11期
关键词：
D O I：
10.1016/0038-1101(94)90180-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A Fourier-series model describing the nonlinear drift velocity-field characteristic in GaAs, InP, InGaAs and Si semiconductors is presented. Using this model, closed-form expressions are obtained for the harmonic and intermodulation performance of semiconductors due to the nonlinear drift velocity-field characteristic.
引用
收藏
页码：1877 / 1884
页数：8
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