HARMONIC AND INTERMODULATION GENERATION IN GAAS, INP, INGAAS AND SI SEMICONDUCTORS

被引：0
|
作者：
ABUELMA'ATTI, MT
机构：
[1] King Fahd University of Petroleum and Minerals, Dhahran, 31261
来源：
SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 11期
关键词：
D O I：
10.1016/0038-1101(94)90180-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A Fourier-series model describing the nonlinear drift velocity-field characteristic in GaAs, InP, InGaAs and Si semiconductors is presented. Using this model, closed-form expressions are obtained for the harmonic and intermodulation performance of semiconductors due to the nonlinear drift velocity-field characteristic.
引用
收藏
页码：1877 / 1884
页数：8
相关论文
共 50 条
  • [31] THEORY OF INTERMODULATION + HARMONIC GENERATION IN TRAVELING-WAVE MASERS
    SCHULZDUBOIS, EO
    PROCEEDINGS OF THE IEEE, 1964, 52 (06) : 644 - &
  • [32] Anodic properties and sulfidation of GaAs (100) and InP (100) semiconductors
    Elbahnasawy, RF
    McInerney, JG
    ELECTROCHEMICAL PROCESSING IN ULSI FABRICATION AND SEMICONDUCTOR/METAL DEPOSITION II, PROCEEDINGS, 1999, 99 (09): : 242 - 255
  • [33] HOT-ELECTRONS IN COLD SEMICONDUCTORS - GAAS, INP AND CDTE
    MUNZEL, H
    STECKENBORN, A
    BIMBERG, D
    JOURNAL OF LUMINESCENCE, 1981, 24-5 (NOV) : 569 - 572
  • [34] DISORDERING OF INGAAS-INP QUANTUM WELLS BY SI IMPLANTATION
    TELL, B
    JOHNSON, BC
    ZYSKIND, JL
    BROWN, JM
    SULHOFF, JW
    BROWNGOEBELER, KF
    MILLER, BI
    KOREN, U
    APPLIED PHYSICS LETTERS, 1988, 52 (17) : 1428 - 1430
  • [35] Ge on Si and InP/InGaAs Single Photon Avalanche Diodes
    Lu, Zhiwen
    Sun, Wenlu
    Hu, Chong
    Holmes, Archie
    Campbell, Joe C.
    Kang, Yimin
    Liu, Han-Din
    INFRARED SENSORS, DEVICES, AND APPLICATIONS AND SINGLE PHOTON IMAGING II, 2011, 8155
  • [36] DOWNSTREAM PLASMA INDUCED DEPOSITION OF SINX ON SI, INP, AND INGAAS
    DZIOBA, S
    MEIKLE, S
    STREATER, RW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (10) : 2599 - 2603
  • [37] EPITAXIAL OVERGROWTH OF INP AND GAAS MICROPORES, MICROCAVITIES AND MICROLAMELLAS BY INAS AND INGAAS
    Nohavica, Dusan
    Grym, Jan
    Hulicius, Eduard
    Pangrac, Jiri
    Gladkov, Petar
    Jarchovsky, Zdenek
    NANOCON 2010, 2ND INTERNATIONAL CONFERENCE, 2010, : 28 - 33
  • [38] INGAAS/INP SUPERLATTICE MIXING INDUCED BY ZN OR SI DIFFUSION
    SCHWARZ, SA
    MEI, P
    VENKATESAN, T
    BHAT, R
    HWANG, DM
    SCHWARTZ, CL
    KOZA, M
    NAZAR, L
    SKROMME, BJ
    APPLIED PHYSICS LETTERS, 1988, 53 (12) : 1051 - 1053
  • [39] INGAAS/INP SUPERLATTICE MIXING INDUCED BY ZN OR SI DOPING
    SCHWARZ, SA
    MEI, P
    VENKATESAN, T
    BHAT, R
    KOZA, M
    JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) : S10 - S10
  • [40] InGaAs quantum wells on wafer-bonded InP/GaAs substrates
    Hayashi, S
    Sandhu, R
    Wojtowicz, M
    Chen, G
    Hicks, R
    Goorsky, MS
    JOURNAL OF APPLIED PHYSICS, 2005, 98 (09)
12345