IMPLANT ISOLATION MECHANISMS IN GAAS, ALGAAS, INP AND INGAAS

被引：0
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作者：
PEARTON, SJ
ABERNATHY, CR
HOBSON, WS
VONNEIDA, AE
机构：
来源：
ADVANCES IN MATERIALS, PROCESSING AND DEVICES IN III-V COMPOUND SEMICONDUCTORS | 1989年 / 144卷
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O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
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页码：433 / 438
页数：6
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