A MICROWAVE GAAS-FET POWER MODULE WITH GAAS MATCHING CIRCUITS - THE M-FET (MATCHED FIELD-EFFECT TRANSISTOR)

被引：0
|
作者：
MAGALHAES, FM [1 ]
BECCONE, JP [1 ]
IRVIN, JC [1 ]
PERELLI, SJ [1 ]
SCHLOSSER, WO [1 ]
机构：
[1] AT&T BELL LABS,DEPT POWER CIRCUIT TECHNOL,WHIPPANY,NJ
来源：
MICROWAVE JOURNAL | 1985年 / 28卷 / 05期
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：205 / &
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