A MICROWAVE GAAS-FET POWER MODULE WITH GAAS MATCHING CIRCUITS - THE M-FET (MATCHED FIELD-EFFECT TRANSISTOR)

被引：0

作者：

MAGALHAES, FM ^{[1
]}

BECCONE, JP ^{[1
]}

IRVIN, JC ^{[1
]}

PERELLI, SJ ^{[1
]}

SCHLOSSER, WO ^{[1
]}

机构：

[1] AT&T BELL LABS,DEPT POWER CIRCUIT TECHNOL,WHIPPANY,NJ

来源：

MICROWAVE JOURNAL | 1985年 / 28卷 / 05期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：205 / &

共 50 条

[21] GAAS MICROWAVE-POWER FET
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