INSULATED GATE BIPOLAR-TRANSISTOR (IGBT) MODELING USING IG-SPICE

被引：39
|
作者：
MITTER, CS
HEFNER, AR
CHEN, DY
LEE, FC
机构：
[1] VIRGINIA POLYTECH INST & STATE UNIV, BRADLEY DEPT ELECT ENGN, VIRGINIA POWER ELECTR CTR, BLACKSBURG, VA 24061 USA
[2] NATL INST STAND & TECH, DIV SEMICOND ELECTR, GAITHERSBURG, MD 20899 USA
来源：
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS | 1994年 / 30卷 / 01期
关键词：
Capacitors - Computer simulation - Electric conductivity - Electric insulation - Semiconductor junctions;
D O I：
10.1109/28.273618
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A physics-based model for the Insulated Gate Bipolar Transistor (IGBT) is implemented into the widely available circuit simulation package IG-SPICE. Based on analytical equations describing the semiconductor-physics, the model accurately describes the nonlinear junction capacitances, moving boundaries, recombination, and carrier scattering, and effectively predicts the device conductivity modulation. In this paper, the procedure used to incorporate the model into IG-SPICE and various methods necessary to ensure convergence are described. The effectiveness of the SPICE-based IGBT model is demonstrated by investigating the static and dynamic current sharing of paralleled IGBTs with different device model parameters. The simulation results are verified by comparison with experimental results.
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页码：24 / 33
页数：10
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