INSULATED GATE BIPOLAR-TRANSISTOR (IGBT) MODELING USING IG-SPICE

被引：39
|
作者：
MITTER, CS
HEFNER, AR
CHEN, DY
LEE, FC
机构：
[1] VIRGINIA POLYTECH INST & STATE UNIV, BRADLEY DEPT ELECT ENGN, VIRGINIA POWER ELECTR CTR, BLACKSBURG, VA 24061 USA
[2] NATL INST STAND & TECH, DIV SEMICOND ELECTR, GAITHERSBURG, MD 20899 USA
来源：
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS | 1994年 / 30卷 / 01期
关键词：
Capacitors - Computer simulation - Electric conductivity - Electric insulation - Semiconductor junctions;
D O I：
10.1109/28.273618
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A physics-based model for the Insulated Gate Bipolar Transistor (IGBT) is implemented into the widely available circuit simulation package IG-SPICE. Based on analytical equations describing the semiconductor-physics, the model accurately describes the nonlinear junction capacitances, moving boundaries, recombination, and carrier scattering, and effectively predicts the device conductivity modulation. In this paper, the procedure used to incorporate the model into IG-SPICE and various methods necessary to ensure convergence are described. The effectiveness of the SPICE-based IGBT model is demonstrated by investigating the static and dynamic current sharing of paralleled IGBTs with different device model parameters. The simulation results are verified by comparison with experimental results.
引用
下载
收藏
页码：24 / 33
页数：10
相关论文
共 50 条
  • [21] The Superjunction Insulated Gate Bipolar Transistor Optimization and Modeling
    Antoniou, Marina
    Udrea, Florin
    Bauer, Friedhelm
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (03) : 594 - 600
  • [22] LATERAL INSULATED-GATE BIPOLAR-TRANSISTOR (LIGBT) WITH A SEGMENTED ANODE STRUCTURE
    SIN, JKO
    MUKHERJEE, S
    IEEE ELECTRON DEVICE LETTERS, 1991, 12 (02) : 45 - 47
  • [23] OUTPUT CHARACTERISTICS OF INSULATED GATE BIPOLAR-TRANSISTOR MODULES AND IMPROVEMENT WITH SUBSTRATE CONTROL
    LAZARUS, MJ
    SMITH, I
    JONES, LL
    FINNEY, AD
    IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1988, 135 (05): : 97 - 106
  • [24] A 600V INSULATED-GATE BIPOLAR-TRANSISTOR WITH A TRENCH MOS GATE STRUCTURE
    HARADA, M
    MINATO, T
    MITSUBISHI ELECTRIC ADVANCE, 1994, 66 : 17 - 19
  • [25] An Investigation of the Drive Circuit Requirements for the Power Insulated Gate Bipolar Transistor (IGBT)
    Hefner, Allen R., Jr.
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 1991, 6 (02) : 208 - 219
  • [26] USING SPICE FOR THE MODELIZATION OF THE STATIC BEHAVIOR OF THE INSULATED GATE TRANSISTOR
    GAFFIOT, F
    CHANTE, JP
    LEHELLEY, M
    JOURNAL DE PHYSIQUE LETTRES, 1984, 45 (18): : L907 - L911
  • [27] An Improved Understanding for the Transient Operation of the Power Insulated Gate Bipolar Transistor (IGBT)
    Hefner, Allen R., Jr.
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 1990, 5 (04) : 459 - 468
  • [28] Thermal and electrical evaluation of insulated gate bipolar transistor (IGBT) power modules
    d'Egmont, Philippe R.
    Moreira, Rodrigo P. M.
    Tostado, Christopher P.
    Naveira-Cotta, Carolina P.
    Duda, Fernando P.
    Dias, Robson F. S.
    Chen, Kelvin
    HIGH TEMPERATURES-HIGH PRESSURES, 2024, 53 (1-2) : 175 - 200
  • [29] A HIGH-POWER CURRENT PULSE-GENERATOR USING AN INSULATED-GATE BIPOLAR-TRANSISTOR
    PARK, K
    KIM, JJ
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1995, 66 (06): : 3713 - 3714
  • [30] THE COMPLEMENTARY INSULATED-GATE BIPOLAR-TRANSISTOR (CIGBT) - A NEW POWER SWITCHING DEVICE
    BOISVERT, DM
    PLUMMER, JD
    IEEE ELECTRON DEVICE LETTERS, 1990, 11 (09) : 368 - 370
12345