FORMATION OF SILICON DIOXIDE FILMS IN ACIDIC SOLUTIONS

被引：74

作者：

HISHINUMA, A ^{[1
]}

GODA, T ^{[1
]}

KITAOKA, M ^{[1
]}

HAYASHI, S ^{[1
]}

KAWAHARA, H ^{[1
]}

机构：

[1] NIPPON SHEET GLASS CO LTD,CENT RES LAB,ITAMI,HYOGO,JAPAN

来源：

APPLIED SURFACE SCIENCE | 1991年 / 48-9卷

关键词：

D O I：

10.1016/0169-4332(91)90364-P

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

SiO2 thin films can be formed by immersing a substrate into hexafluorosilisic acid (H2SiF6) solution after boric acid is added. This process is called LPD (liquid phase deposition). We found that chemically more stable SiO2 thin films can be obtained in H2SiF6 solution by dissolving aluminum. Films deposited at room temperature by this method were observed to be silicon dioxide by use of IR, XPS and ellipsometry. Several properties of these films and the mechanism of this new LPD process are discussed.

引用

页码：405 / 408

页数：4

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